Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
SS54B | SS56B | SS510B | SS515B | SS520B | Unit | |
Maximum repetitive peak reverse voltage |
VRRM | 40 | 60 | 100 | 150 | 200 | V | |
Maximum RMS voltage | VRMS | 28 | 42 | 70 | 105 | 140 | V | |
Maximum DC blocking voltage |
VDC | 40 | 60 | 100 | 150 | 200 | V | |
Maximum average forward rectified current |
IF(AV) | 5.0 | A | |||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
125 |
A |
|||||
@IF=5.0A Maximum forward voltage |
VF | 0.55 | 0.70 | 0.85 | 0.92 | 0.95 | V | |
@VDC Maximum reverse current |
TA= 25ºC | IR | 30 | 30 | 30 | μA | ||
Typical thermal resistance (Note 1) | RθJA | 60 | ºC/W | |||||
Operating junction temperature range |
TJ | -55 --- +125 | -55 --- +150 | ºC | ||||
Storage temperature range |
TSTG | -55 --- +150 | ºC |