Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Symbols | MB2M | MB4M | MB6M | MB8M | MB10M | Units | |
Maximum repetitive peak reverse voltage |
VRMM | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum RMS voltage | VRMS | 140 | 280 | 420 | 560 | 700 | Volts |
Maximum DC blocking voltage | VDC | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum average forward rectified current at TA=30ºC On glass-epoxy P.C.B. On aluminum substrate(Note 1,2) |
IF(AV) |
0.8 |
Amps |
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Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) |
IFSM |
30.0 |
Amps |
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Maximum forward voltage at 0.4A | VF | 1.1 | Volts | ||||
Maximum DC reverse current TA=25ºC at rated DC blocking voltage TA=100ºC |
IR | 5.0 100 |
μA | ||||
Typical junction capacitance per leg (Note 3) |
CJ | 15.0 | pF | ||||
Typical thermal resistance per leg | RθJA | 75.0 | ºC/W | ||||
Operating Temperature Range | TJ | -55 to +150 | ºC | ||||
Storage Temperature Range | TSTG | -55 to +150 | ºC |