1n4001-1n4007 Rectifier Diode Do-41 1000 Volt Electronic Silicon Diodes

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: 1N4001-1N4007
• Certification: RoHS, CE, ISO, CCC, SGS
• Luminous Intensity: Standard
• Color: Gray,Black
• Structure: Planar
• Material: Silicon
• Transport Package: Carton
• Specification: DO-41
• Trademark: ZG
• Origin: China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

Maybe You want to ask these questions~

1, Are you Manufacturer or trading company?
We are a manufacturer  in diode, bridge rectifiers and automotive rectifier diode. 
We have 3 factories for different  kinds of goods.

 
2. May I have some samples for testing? 
Yes,sure.

3. What about the delivery ? 
Usually the lead time is about 1-3 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time. 

4. What about the payment terms ?
 normally for T/T
 
5. What about the shipment terms ? 
FOB Shanghai /shenzhen/ningbo

6..How far is your facotry to shenzhen?
Take plane:2hours
Take the Bullet Train:5hours
we could pick up there.

Parameter		Symbols	1N 4001	1N 4002		1N 4003		1N 4004		1N 4005		1N 4006		1N 4007		Unit
Maximum repetitive peak reverse voltage		VRRM	50	100		200		400		600		800		1000		V
Maximum RMS voltage		VRMS	35	70		140		280		420		560		700		V
Maximum DC blocking voltage		VDC	50		100		200		400		600		800		1000	V
Maximum average forward rectified current		IF(AV)	1.0													A
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave		IFSM	30													A
@IF=1.0A Maximum forward voltage		VF	1.1													V
@VDC Maximum reverse current	TA= 25ºC TA= 125ºC	IR	5													μA
			100
Typical thermal resistance  (Note 1)		RθJA	50													ºC/W
Operating junction and storage temperature range		Tj, TSTG	-55 --- +150													ºC