Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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SYMBOLS | MUR120 | MUR130 | MUR140 | MUR160 | UNITS | ||
Maximum repetitive peak reverse voltage | VRRM | 200 | 300 | 400 | 600 | VOLTS | |
Maximum RMS voltage | VRMS | 140 | 210 | 280 | 420 | VOLTS | |
Maximum DC blocking voltage | VDC | 200 | 300 | 400 | 600 | VOLTS | |
Maximum average forward rectified current 0.375 "(9.5mm) lead length |
I(AV) | 1.0 | Amps | ||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM | 35 |
Amps |
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Maximum instantaneous forward voltage at 1.0A | VF | 0.875 | 1.25 | Volts | |||
Maximum DC reverse current at rated DC blocking voltage | TA=25 C TA=100 C |
IR | 10.0 100.0 |
µA | |||
Maximum reverse recovery time (NOTE 1) | trr | 25 | 50 | ns | |||
Typical thermal resistance (NOTE 2) | RθJA | 50.0 | C/W | ||||
Operating junction and storage temperature range | TJ,TSTG | -65 to +150 | C |