New 1.5A Bridge-Rectifier Kbp10 Negotiate Price

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: KBP005-KBP10
• Certification: RoHS, CE, ISO, CCC
• Luminous Intensity: Standard
• Structure: Alloy
• Material: Silicon
• Raw Material: Copper
• Transport Package: by Sea, Packaging
• Specification: KBP
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), its working frequency under 3 KHZ.
Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), the working frequency is lower than 3 kHz, when work in a few to several hundred kHz frequency, voltage change direction, time to slow recovery time, ordinary rectifier diode can't normal to achieve single wizard, then with quick restore fast recovery rectifier diode.
The characteristics of fast recovery diode is its recovery time is short, this feature makes it suitable for high frequency (such as the TV line frequency) of the rectifier.Have a fast recovery diode determines the performance of the important parameters of reverse recovery time.Reverse recovery time is defined as sharp transition to the diode to the from state by state, since output pulse down to zero, to reverse the power back to the maximum 10% of the time required to reverse current, commonly used symbols TRR said.Ordinary fast recovery rectifier diode TRR Andrew bynum for a few seconds (10-9 s), super fast recovery diode TRR general for dozens of nanoseconds.The smaller the Trr fast recovery diode work frequency is higher.
   

CHARACTERISTICS	SYMBOL	KBP 005	KBP 01	KBP 02	KBP 04	KBP 06	KBP 08	KBP 10	UNIT
Maximum Recurrent Peak Reverse Voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS Bridge Input Voltage	VRMS	35	70	140	280	420	560	700	V
Maximum DC Blocking Voltage	VDC	50	100	200	400	600	800	1000	V
Maximum Average Forward Rectified Output Current @TA=50 ºC	I(AV)	1.5							A
Peak Forward Surge Current , 8.3ms Single Half Sine-Wave Super Imposed on Rated Load	IFSM	50							A
Maximum   Forward Voltage Drop Per Bridge Element at 1.5A Peak	VF	1.1							V
Maximum Reverse Current at Rated DC Blocking Voltage Per Element @TJ=100ºC	IR	5.0							μA
Maximum Reverse Current at Rated DC Blocking Voltage Per Element @TJ=100ºC	IR	1.0							mA
Operating Temperature Range	TJ	-55 to +150							ºC
Storage Temperature Range	TSTG	-55 to +150							ºC