MB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs Package

Product Details
Customization: Available
Encapsulation Structure: Plastic Sealed Transistor
Application: Electronic Products
Manufacturer/Factory, Trading Company
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  • MB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs Package
  • MB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs Package
  • MB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs Package
  • MB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs Package
  • MB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs Package
  • MB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs Package
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Basic Info.

Model NO.
MB2S-MB10S
Certification
RoHS, CE, ISO, CCC
Luminous Intensity
Standard
Structure
Alloy
Material
Silicon
Raw Material
Copper
Transport Package
by Sea, Packaging
Specification
MBS
Trademark
ZG Brand
Origin
Auhui Province, China
HS Code
8541100000
Production Capacity
50000000000000000000000000

Product Description

Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), its working frequency under 3 KHZ.
Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), the working frequency is lower than 3 kHz, when work in a few to several hundred kHz frequency, voltage change direction, time to slow recovery time, ordinary rectifier diode can't normal to achieve single wizard, then with quick restore fast recovery rectifier diode.
The characteristics of fast recovery diode is its recovery time is short, this feature makes it suitable for high frequency (such as the TV line frequency) of the rectifier.Have a fast recovery diode determines the performance of the important parameters of reverse recovery time.Reverse recovery time is defined as sharp transition to the diode to the from state by state, since output pulse down to zero, to reverse the power back to the maximum 10% of the time required to reverse current, commonly used symbols TRR said.Ordinary fast recovery rectifier diode TRR Andrew bynum for a few seconds (10-9 s), super fast recovery diode TRR general for dozens of nanoseconds.The smaller the Trr fast recovery diode work frequency is higher.
   
  

Parameter

Symbols
MB2S MB4S MB6S MB8S MB10S
Unit

Maximum repetitive peak reverse voltage
VRRM 200 400 600 800 1000 V
Maximum RMS voltage VRMS 140 280 420 560 700 V

Maximum DC blocking voltage
VDC 200 400 600 800 1000 V
(Note 1) TA= 25ºC
Maximum average forward rectified current

IF(AV)
0.8 A
(Note 2) TA= 25ºC
Maximum average forward rectified current
0.5 A
8.3 msNon-repetitive peak forward surge current
8.3 ms singlehalf sine-wave

IFSM

30

A
@IF=0.4A
Maximum forward voltage
VF 1.1 V
 @VDC TA = 25ºC
Maximum reverse current
IR 5 μA
  Typical thermal resistance (Note 3) RθJA 85 ºC/W
  Typical thermal resistance (Note 4) RθJL 20

Operating junction and storage temperature range
Tj, TSTG -55 --- +150 ºC


MB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs PackageMB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs PackageMB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs PackageMB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs PackageMB2s-MB10s 0.8A 1000V Glass Passivated Bridge Rectifier with Mbs Package

 

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