Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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SYMBOLS | FR 101 | FR 102 | FR 103 | FR 104 | FR 105 | FR 106 | FR 107 | UNITS | ||
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V | |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | |
Maximum average forward rectified current 0.375 "(9.5mm) lead length at TA=75 C | I(AV) | 1.0 | A | |||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM | 30.0 | A |
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Maximum instantaneous forward voltage at 1.0A | VF | 1.3 | V | |||||||
Maximum DC reverse current at rated DC blocking voltage | TA=25 C TA=100 C | IR | 5.0 100.0 | μA | ||||||
Maximum reverse recovery time (NOTE 1) | trr | 150 | 250 | 500 | ns | |||||
Typical junction capacitance (NOTE 2) | CJ | 15.0 | pF | |||||||
Typical thermal resistance (NOTE 3) | RθJA | 50.0 | o C/W | |||||||
Operating junction and storage temperature range | TJ,TSTG | -55 to +150 | 'C |