1n4007 M7 Diode SMD 1A 1000V Rectifier Diode In4007 M7

• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Certification: RoHS, CE, ISO, CCC, SGS
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 1N4007
• Luminous Intensity: Standard
• Color: Red
• Structure: Diffusion
• Material: Silicon
• Transport Package: by Sea, Packing
• Specification: DO-41
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 500000000000
• Package Size: 40.00cm * 25.00cm * 25.00cm
• Package Gross Weight: 14.000kg

Product Description

Product Description


Maximum Ratings and Electrical Characteristics

Rating at 25ºC ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20%
 

	Symbols	1N 4001	1N 4002	1N 4003	1N 4004	1N 4005	1N 4006	1N 4007	Units
Maximum repetitive peak reverse voltage	VRMM	50	100	200	400	600	800	1000	Volts
Maximum RMS voltage	VRMS	35	70	140	280	420	560	700	Volts
Maximum DC blocking voltage	VDC	50	100	200	400	600	800	1000	Volts
Maximum Average Forward Rectified Current @TA=75 ºC	I(AV)	1.0							Amps
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method)	IFSM	30.0							Amps
Maximum forward voltage at 1.0A	VF	1.1							Volts
Maximum DC reverse current TJ=25ºC at rated DC blocking voltage TJ=100ºC	IR	5.0 50.0							μA
Typical junction capacitance (Note 1)	CJ	15.0							pF
Typical thermal resistance (Note 2)	RθJA	26.0							ºC/W
Operating Temperature Range	TJ	-55 to +125							ºC
Storage Temperature Range	TSTG	-55 to +125							ºC

Notes:

1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction of ambient


 

Detailed Images
 

DO-41

  


  





 

Features

1. Low cost

2.Diffused junction

3.Low forward voltage drop

4.Low reverse leakage current

5.High current capability

6.The plastic material carries UL recognition 94V-0
 

Mechanical Data

 

1.Case: JEDEC DO-41 molded plastic

2.Polarity: Color band denotes cathode

3.Weight: 0.012 ounces , 0.34 grams

4.Mounting position :Any


 

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Anhui Zhongxin Semiconductor Co., Ltd. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.



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