680V/12A 0.8mΩ Zg12n65 N-Channel Advanced Power Mosfet

• Customization: Available
• Certification: RoHS, CE, ISO, CCC, SGS
• Shape: GT
• Model NO.: Mosfet
• Shielding Type: Remote Cut-Off Shielding Tube
• Cooling Method: Naturally Cooled Tube
• Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
• Working Frequency: High Frequency
• Structure: IGBT
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: by Sea, Packing
• Specification: T0-247, T0-3P, T0-220, T0-220F, T0-263
• Trademark: ZG
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 500000
• Package Size: 36.00cm * 36.00cm * 30.00cm
• Package Gross Weight: 12.500kg

Product Description

  ZG12N65 is an N-channel enhancement mode MOSFET, which is produced using Zhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
 

VDSS	650	V
ID	11.5	A
RDS(ON)	0.65	Ω
Crss	18	pF

Parameter	Symbol		Value	Unit
- Drain-Source Voltage	VDSS		650	V
Continues Drain Current	ID	Tc=25ºC	11.5*	A
		Tc=100ºC	6.8*
( 1) Plused Drain Current (note 1)	IDM		46	A
Gate-to-Source Voltage	VGS		±30	V
( 2) Single Pulsed Avalanche Energy (note 2)	EAS		590	mJ
( 1) Avalanche Current (note 1)	IAR		11	A
( 1) Repetitive Avalanche Energy (note 1)	EAR		20	mJ
( 3) Peak Diode Recovery (note 3)	dv/dt		4.5	V/ns
Power Dissipation	PD Tc=25ºC	TO-220	240	W
		TO-220F	50
Power Dissipation Derating Factor	PD(DF) Above 25ºC	TO-220	2.0	W/ºC
		TO-220F	0.4
Operating and Storage Temperature Range	TJ,TSTG		150,-55~+150	ºC
Maximum Temperature for Soldering	TL		300	ºC

Parameter	Symbol		Max	Unit
Thermal Resistance,Junction to Case	Rth(j-c)	TO-220/TO-262	0.52	W
		TO-220F	2.5
Thermal Resistance,Junction to Ambient	Rth(j-A)	TO-220	62.5	W/ºC
		TO-220F	62.5

Off-Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
- Drain-Source Breakdown Voltage	BVDSS	ID=250μA, VGS=0V	600	-	-	V
Breakdown Voltage Temperature Coefficient	△BVDSS/△TJ	ID=250μA, referenced to 25ºC	-	0.7	-	V/ºC
Zero Gate Voltage Drain Current	IDSS	VDS=650V,VGS=0V, TC=25ºC	-	-	1	μA
		VDS=520V, TC=125ºC	-	-	10
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS = -30V	-	-	-100	nA

On-Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250μA	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=6.0A	-	0.65	0.75	Ω
Forward Transconductance	gfs	VDS = 40V, ID=6.0A(note4)	-	10	-	S

Dynamic Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	-	1887	2507	pF
Output capacitance	Coss		-	188	243	pF
Reverse transfer capacitance	Crss		-	18	28	pF

1. Exceeding the maximun ratings of the device in performance may cause damage to the device  ,  even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device.
2. When installing the heatsink , please  pay  attention to the  torsional  moment  and the  smoothness of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity , it is necessary to protect the device from being damaged by the static electricity when using it.
4. This publication is made by Zhongxin Microelectronics and subject to regular change without notice.